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Preliminary Datasheet
RJK5003DPD
Silicon N Channel Power MOS FET High Speed Power Switching Use
Features
VDSS : 500 V RDS(on) : 1.5 (MAX.) ID : 5 A Surface mount package (MP-3A)
R07DS0049EJ0400 (Previous: REJ03G0580-0300) Rev.4.00 Jul 22, 2010
Outline
RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A)
4 2, 4
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1 12 3 3
1. 2. 3. 4.
Gate Drain Source Drain
Applications
Lighting ballast, SMPS, etc.
Maximum Ratings
Parameter Drain to source voltage Gate to source voltage Drain current Drain Peak current Avalanche current Channel dissipation Channel temperature Storage temperature
(Tc = 25C)
Conditions VGS = 0 V VDS = 0 V
N
Symbol VDSS VGSS ID
Ratings 500 30 5 20 5
Unit V V A
ID (pulse) IAP
Note1
A A
L = 200 H
Pch Tch Tstg ch-c
62.5 150 -55 to +150 2.0
W C C C/W Channel to case
Channel to case thermal impedance Note:
1. Pulse width limited by safe operating area.
R07DS0049EJ0400 Rev.4.00 Jul 22, 2010
Page 1 of 6
RJK5003DPD
Preliminary
Electrical Characteristics
(Tch = 25C)
Parameter Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Note: 2. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF Min. 500 -- -- 3.0 -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.5 1.3 550 60 10 20 20 60 25 1.0 Max. -- 1 0.1 4.0 1.5 -- -- -- -- -- -- -- 1.5 Unit V mA A V pF pF pF ns ns ns ns V Test conditions ID = 1 mA, VGS = 0 V VDS = 500 V, VGS = 0 V VGS = 30 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID= 2 A, VGS = 10 VNote2 VDS = 25 V, VGS= 0 V, f = 1 MHz VDD = 200 V, ID = 2 A, VGS = 10 V RG = 25 IF = 2 A, VGS = 0 V Note2
R07DS0049EJ0400 Rev.4.00 Jul 22, 2010
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Page 2 of 6
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RJK5003DPD
Preliminary
Main Characteristics
Power vs. Temperature Derating
70 100
PW =
Maximum Safe Operating Area
Channel Dissipation Pch (W)
60
Drain Current ID (A)
50 40 30 20 10 0
10
10 0 s
10
s
1
DC
0.1
Operation in this area is limited by RDS(on) Tc = 25C Single pulse
0
50
100
150
200
0.01 1
10
100
1000
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 Tc = 25C Pulse Test VGS = 20 V
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5 10 V
Typical Output Characteristics
VGS = 20 V 10 V
7V 5V 6V
Drain Current ID (A)
PDS = 62.5 W
6V
6
Drain Current ID (A)
8
7V
4
5V
3
Tc = 25C Pulse Test
4
2
2
1
4V
4V 4 6 8 10
0 0 4
0
8
12
16
20
0
2
N
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage (Typical)
Drain to Source Saturation Voltage VDS(on) (V)
20 Tc = 25C Pulse Test 16 ID = 8 A 12
Static Drain to Source on State Resistance vs. Drain Current (Typical)
4 Tc = 25C Pulse Test 3.2 2.4 VGS = 10 V 1.6 0.8 20 V
8
5A 3A
4
0 0 4 8 12 16 20
Drain to Source on State Resistance RDS(on) ()
0 10-1
100
101
102
Gate to Source Voltage VGS (V)
Drain Current ID (A)
R07DS0049EJ0400 Rev.4.00 Jul 22, 2010
Page 3 of 6
RJK5003DPD
Preliminary
Capacitance vs. Drain to Source Voltage (Typical)
103 Ciss
Transfer Characteristics (Typical)
10 Tc = 25C VDS = 10 V 8 Pulse Test
Drain Current ID (A)
Capacitance (pF)
102
6
4
Coss 101 Tch = 25C f = 1 MHz VGS = 0 V 0 10 100 101 Crss
2 0
0
2
4
6
8
10
102
103
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V) Gate to Source Voltage vs. Gate Charge (Typical)
Switching Time (ns)
3 2 102 7 5 3 2 101 0 10
Tch = 25C VDD = 200 V VGS = 10 V RG = 25 Pulse Test
Gate to Source Voltage VGS (V)
103 7 5
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16 Tch = 25C ID = 5 A 12 td(off) tf 8 4 tr 3 5 7 101 0 0 4 8
Switching Characteristics (Typical)
VDS = 100 V
200 V 400 V
td(on)
2
12
16
20
24
Drain Current ID (A)
Gate Charge Qg (nC)
Drain to Source Breakdown Voltage V(BR)DSS (tC) Drain to Source Breakdown Voltage V(BR)DSS (25C)
Reverse Drain Current vs. Source to Drain Voltage Characteristics (Typical)
N
Breakdown Voltage vs. Channel Temperature (Typical)
10
1.4
Source Current IDR (A)
8
VGS = 0 V Pulse Test Ta = 25C
VGS = 0 V ID = 1 mA
1.2
6
1.0
4
0.8
2 0 0 0.4 0.8 1.2 1.6 2
0.6
0.4 -75
-25
25
75
125
175
Source to Drain Voltage VSD (V)
Channel Temperature Tch (C)
R07DS0049EJ0400 Rev.4.00 Jul 22, 2010
Page 4 of 6
RJK5003DPD
Static Drain to Source on State Resistance vs. Channel Temperature (Typical)
101 VGS = 10 V 7 ID = 2 A 5 Pulse Test
4 3 2
Preliminary
Gate to Source Cutoff Voltage vs. Channel Temperature (Typical)
5.0 VDS = 10 V ID = 1 mA 4.0
Drain to Source on State Resistance RDS(on) (25C)
Drain to Source on State Resistance RDS(on) (tC)
Gate to Source Cutoff Voltage VGS(off) (V)
3.0
10
0
7 5 4 3 2
2.0
1.0
10-1
-75 -25 25 75 125 175
0 -75
-25
25
75
125
175
Channel Temperature Tch (C)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance s (t)
10
5
D=1
2
0.5 1 0.2
0.5 0.1
0.2
0.05 0.02 0.01 Single pulse 1m
0.1 100
Switching Time Measurement Circuit
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PDM D= PW T PW T
Normalized Transient Thermal Impedance vs. Pulse Width
10 m
100 m
1
10
Pulse Width PW (s)
N
Switching Waveform
Vin Monitor RG D.U.T. RL
Vout Monitor Vin Vout VDD 10% 10%
90%
10%
90% td(on) tr
90% td(off) tf
R07DS0049EJ0400 Rev.4.00 Jul 22, 2010
Page 5 of 6
RJK5003DPD
Preliminary
Package Dimensions
Package Name MP-3A JEITA Package Code SC-63 RENESAS Code PRSS0004ZG-A Previous Code MASS[Typ.] 0.32g
Unit: mm
1 0.2
6.6 5.3 0.2
2.3 0.5 0.2
6.1 0.2
10.4Max
0.1 0.1
1Max
2.5Min
0.76 0.2
0.76
0.5 0.2
Ordering Information
Part Name RJK5003DPD-00-J2
3000 pcs
R07DS0049EJ0400 Rev.4.00 Jul 22, 2010
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2.3
2.3 0.2
Quantity
1
1.4 0.2
Shipping Container
Taping
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Page 6 of 6
Notice
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